Bipolar RF Transistors

Bipolar RF Transistors are semiconductor devices with three terminals that are used to switch or amplify signals in equipment involving radio frequencies. Bipolar junction transistors are designed as either NPN or PNP, with characteristics of transistor type, collector-emitter breakdown voltage, transition frequency, noise figure, gain, power, DC current gain, and collector current.

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ON Semiconductor CPH6001A-TL-E

RF TRANS NPN 12V 6.7GHZ 6CPH

0.16

ON Semiconductor MCH4016-TL-H

RF TRANS NPN 12V 10GHZ 4MCPH

0.15

Infineon Technologies BFP420H6740XTSA1

RF TRANS NPN 5V 25GHZ SOT343

0.15

ON Semiconductor MCH3007-TL-H

RF TRANS NPN 12V 8GHZ 3MCPH

0.15

ON Semiconductor MCH4017-TL-H

RF TRANS NPN 12V 10GHZ 4MCPH

0.15

Infineon Technologies BFP410H6327XTSA1

RF TRANS NPN 5V 25GHZ SOT343

0.14

Infineon Technologies BFP405FH6327XTSA1

TRANS RF NPN 4.5V 25MA TSFP-4

0.14

Infineon Technologies BFP420H6801XTSA1

RF TRANS NPN 5V 25GHZ SOT343

0.14