Vishay / Siliconix SIHU6N62E-GE3

Product Details

Mounting Type

Through Hole

Package / Case

TO-251-3 Short Leads, IPak, TO-251AA

Vgs(th) (Max) @ Id

4.5V @ 600µA

Operating Temperature

-55°C ~ 150°C (TJ)

Rds On (Max) @ Id, Vgs

850mOhm @ 3A, 10V

Series

SuperFET® II

Power Dissipation (Max)

75W (Tc)

FET Type

N-Channel

Supplier Device Package

I-PAK

Packaging

Tube

Gate Charge (Qg) (Max) @ Vgs

29nC @ 10V

Vgs (Max)

±20V

Drain to Source Voltage (Vdss)

800V

Technology

MOSFET (Metal Oxide)

Input Capacitance (Ciss) (Max) @ Vds

1315pF @ 100V

FET Feature

-

Current - Continuous Drain (Id) @ 25°C

6A (Tc)

Part Status

Active

Drive Voltage (Max Rds On, Min Rds On)

10V