Vishay / Siliconix SI7102DN-T1-E3

Product Details

Vgs(th) (Max) @ Id

800mV @ 250µA

Operating Temperature

-55°C ~ 150°C (TJ)

Rds On (Max) @ Id, Vgs

64mOhm @ 1.5A, 4.5V

Series

TrenchFET®

Power Dissipation (Max)

780mW (Ta), 1.8W (Tc)

FET Type

P-Channel

Gate Charge (Qg) (Max) @ Vgs

17nC @ 4.5V

Packaging

Digi-Reel®

Drain to Source Voltage (Vdss)

8V

Vgs (Max)

±5V

Input Capacitance (Ciss) (Max) @ Vds

900pF @ 4V

Technology

MOSFET (Metal Oxide)

Current - Continuous Drain (Id) @ 25°C

4.6A (Ta)

FET Feature

-

Drive Voltage (Max Rds On, Min Rds On)

4.5V

Part Status

Obsolete

Mounting Type

Surface Mount

Package / Case

4-UFBGA