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Vishay / Siliconix SI6562CDQ-T1-GE3
MOSFET N/P-CH 20V 6.7A 8-TSSOP
- Manufacturer
- Vishay / Siliconix
- Datasheet
- Price
- 0
- Stock
- 4350
Product Details
- Series
- HEXFET®
- Supplier Device Package
- 8-SO
- FET Type
- N and P-Channel
- Gate Charge (Qg) (Max) @ Vgs
- 33nC @ 10V
- Packaging
- Digi-Reel®
- Drain to Source Voltage (Vdss)
- 30V
- FET Feature
- Logic Level Gate
- Input Capacitance (Ciss) (Max) @ Vds
- 650pF @ 25V
- Part Status
- Active
- Current - Continuous Drain (Id) @ 25°C
- -
- Power - Max
- 2.5W
- Mounting Type
- Surface Mount
- Package / Case
- 8-SOIC (0.154", 3.90mm Width)
- Base Part Number
- IRF7389PBF
- Vgs(th) (Max) @ Id
- 1V @ 250µA
- Operating Temperature
- -55°C ~ 150°C (TJ)
- Rds On (Max) @ Id, Vgs
- 29mOhm @ 5.8A, 10V