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Vishay / Siliconix SI6463BDQ-T1-GE3
MOSFET P-CH 20V 6.2A 8-TSSOP
- Manufacturer
- Vishay / Siliconix
- Datasheet
- Price
- 0
- Stock
- 0
Product Details
- Package / Case
- SOT-563, SOT-666
- Vgs(th) (Max) @ Id
- 950mV @ 250µA
- Operating Temperature
- -55°C ~ 150°C (TJ)
- Rds On (Max) @ Id, Vgs
- 156mOhm @ 1.18A, 4.5V
- Series
- TrenchFET®
- Power Dissipation (Max)
- 236mW (Ta)
- FET Type
- P-Channel
- Supplier Device Package
- SC-89-6
- Packaging
- Digi-Reel®
- Gate Charge (Qg) (Max) @ Vgs
- 10.8nC @ 5V
- Vgs (Max)
- ±8V
- Drain to Source Voltage (Vdss)
- 12V
- Technology
- MOSFET (Metal Oxide)
- Input Capacitance (Ciss) (Max) @ Vds
- 480pF @ 6V
- FET Feature
- -
- Current - Continuous Drain (Id) @ 25°C
- -
- Part Status
- Obsolete
- Drive Voltage (Max Rds On, Min Rds On)
- 1.8V, 4.5V
- Mounting Type
- Surface Mount