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Vishay / Siliconix IRFD110

MOSFET N-CH 100V 1A 4-DIP

Manufacturer
Vishay / Siliconix
Datasheet
Price
0
Stock
0

Product Details

Package / Case
4-DIP (0.300", 7.62mm)
Vgs(th) (Max) @ Id
-
Operating Temperature
-
Rds On (Max) @ Id, Vgs
1.6Ohm @ 300mA, 10V
Power Dissipation (Max)
-
Series
-
Supplier Device Package
4-DIP, Hexdip, HVMDIP
FET Type
P-Channel
Gate Charge (Qg) (Max) @ Vgs
15nC @ 15V
Packaging
Tube
Drain to Source Voltage (Vdss)
60V
Technology
MOSFET (Metal Oxide)
Input Capacitance (Ciss) (Max) @ Vds
250pF @ 25V
FET Feature
-
Current - Continuous Drain (Id) @ 25°C
600mA (Ta)
Part Status
Obsolete
Mounting Type
Through Hole