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Vishay / Semiconductor - Diodes Division VS-8S2TH06I-M
DIODE GEN PURP 600V 8A TO220-2
- Manufacturer
- Vishay / Semiconductor - Diodes Division
- Datasheet
- Price
- 0
- Stock
- 0
Product Details
- Speed
- No Recovery Time > 500mA (Io)
- Current - Average Rectified (Io)
- 99A (DC)
- Series
- -
- Operating Temperature - Junction
- -55°C ~ 150°C
- Packaging
- Tube
- Voltage - Forward (Vf) (Max) @ If
- 1.8V @ 30A
- Diode Type
- Silicon Carbide Schottky
- Part Status
- Obsolete
- Mounting Type
- Through Hole
- Package / Case
- TO-247-2
- Capacitance @ Vr, F
- 2100pF @ 0V, 1MHz
- Supplier Device Package
- TO-247
- Reverse Recovery Time (trr)
- 0ns
- Current - Reverse Leakage @ Vr
- 600µA @ 1200V
- Voltage - DC Reverse (Vr) (Max)
- 1200V