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Vishay / Semiconductor - Diodes Division VS-8ETH06FP-N3
DIODE GEN PURP 600V 8A TO220
- Manufacturer
- Vishay / Semiconductor - Diodes Division
- Datasheet
- Price
- 1.59
- Stock
- 0
Product Details
- Supplier Device Package
- DPAK
- Reverse Recovery Time (trr)
- 0ns
- Current - Reverse Leakage @ Vr
- 50µA @ 650V
- Voltage - DC Reverse (Vr) (Max)
- 650V
- Speed
- No Recovery Time > 500mA (Io)
- Current - Average Rectified (Io)
- 6A
- Series
- -
- Operating Temperature - Junction
- -55°C ~ 175°C
- Packaging
- Tape & Reel (TR)
- Voltage - Forward (Vf) (Max) @ If
- 1.8V @ 6A
- Diode Type
- Silicon Carbide Schottky
- Part Status
- Active
- Mounting Type
- Surface Mount
- Package / Case
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Capacitance @ Vr, F
- 150pF @ 5V, 1MHz