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Vishay / Semiconductor - Diodes Division VS-20ETF06STRL-M3
DIODE GEN PURP 600V 20A TO263AB
- Manufacturer
- Vishay / Semiconductor - Diodes Division
- Datasheet
- Price
- 1.65
- Stock
- 0
Product Details
- Reverse Recovery Time (trr)
- 0ns
- Current - Reverse Leakage @ Vr
- 25µA @ 600V
- Voltage - DC Reverse (Vr) (Max)
- 600V
- Speed
- No Recovery Time > 500mA (Io)
- Current - Average Rectified (Io)
- 4A (DC)
- Series
- CoolSiC™+
- Operating Temperature - Junction
- -55°C ~ 175°C
- Packaging
- Tube
- Voltage - Forward (Vf) (Max) @ If
- 2.3V @ 4A
- Diode Type
- Silicon Carbide Schottky
- Part Status
- Active
- Mounting Type
- Through Hole
- Package / Case
- TO-220-2
- Capacitance @ Vr, F
- 80pF @ 1V, 1MHz
- Supplier Device Package
- PG-TO220-2-1