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Transphorm TPH3208LS
GANFET N-CH 650V 20A PQFN
- Manufacturer
- Transphorm
- Datasheet
- Price
- 12.25
- Stock
- 88
Product Details
- Vgs(th) (Max) @ Id
- 4.5V @ 250µA
- Operating Temperature
- -
- Rds On (Max) @ Id, Vgs
- 18mOhm @ 500mA, 10V
- Series
- Linear L2™
- Power Dissipation (Max)
- 600W (Tc)
- FET Type
- N-Channel
- Supplier Device Package
- TO-247 (IXTH)
- Packaging
- Bulk
- Gate Charge (Qg) (Max) @ Vgs
- 260nC @ 10V
- Vgs (Max)
- ±20V
- Drain to Source Voltage (Vdss)
- 100V
- Technology
- MOSFET (Metal Oxide)
- Input Capacitance (Ciss) (Max) @ Vds
- 10500pF @ 25V
- FET Feature
- -
- Current - Continuous Drain (Id) @ 25°C
- 110A (Tc)
- Part Status
- Active
- Drive Voltage (Max Rds On, Min Rds On)
- 10V
- Mounting Type
- Through Hole
- Package / Case
- TO-247-3