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Transphorm TPH3206LSB
GANFET N-CH 650V 16A PQFN
- Manufacturer
- Transphorm
- Datasheet
- Price
- 10.8
- Stock
- 129
Product Details
- Technology
- SiCFET (Silicon Carbide)
- Input Capacitance (Ciss) (Max) @ Vds
- 1125pF @ 800V
- FET Feature
- -
- Current - Continuous Drain (Id) @ 25°C
- 27A (Tc)
- Part Status
- Active
- Drive Voltage (Max Rds On, Min Rds On)
- 20V
- Mounting Type
- Through Hole
- Package / Case
- TO-247-3
- Vgs(th) (Max) @ Id
- 4V @ 7mA
- Operating Temperature
- -55°C ~ 150°C (TJ)
- Rds On (Max) @ Id, Vgs
- 150mOhm @ 14A, 20V
- Series
- -
- Power Dissipation (Max)
- 139W (Tc)
- FET Type
- N-Channel
- Supplier Device Package
- TO-247-3
- Packaging
- Tube
- Gate Charge (Qg) (Max) @ Vgs
- 80nC @ 20V
- Vgs (Max)
- +22V, -6V
- Drain to Source Voltage (Vdss)
- 1200V