Transphorm TP65H070LDG

Product Details

Series

MDmesh™ V

Rds On (Max) @ Id, Vgs

63mOhm @ 21A, 10V

FET Type

N-Channel

Power Dissipation (Max)

250W (Tc)

Packaging

Tube

Supplier Device Package

I2PAK (TO-262)

Vgs (Max)

±25V

Gate Charge (Qg) (Max) @ Vgs

98nC @ 10V

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

650V

FET Feature

-

Input Capacitance (Ciss) (Max) @ Vds

4200pF @ 100V

Part Status

Active

Current - Continuous Drain (Id) @ 25°C

42A (Tc)

Mounting Type

Through Hole

Drive Voltage (Max Rds On, Min Rds On)

10V

Package / Case

TO-262-3 Long Leads, I²Pak, TO-262AA

Base Part Number

STI57N

Vgs(th) (Max) @ Id

5V @ 250µA

Operating Temperature

-55°C ~ 150°C (TJ)