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Transphorm TP65H050WS
GANFET N-CH 650V 34A TO247-3
- Manufacturer
- Transphorm
- Datasheet
- Price
- 15.5
- Stock
- 393
Product Details
- Vgs(th) (Max) @ Id
- 4V @ 5mA
- Operating Temperature
- -55°C ~ 150°C (TJ)
- Rds On (Max) @ Id, Vgs
- 98mOhm @ 20A, 20V
- Series
- C2M™
- Power Dissipation (Max)
- 192W (Tc)
- FET Type
- N-Channel
- Supplier Device Package
- TO-247-3
- Packaging
- Bulk
- Gate Charge (Qg) (Max) @ Vgs
- 62nC @ 5V
- Vgs (Max)
- +25V, -10V
- Drain to Source Voltage (Vdss)
- 1200V
- Technology
- SiCFET (Silicon Carbide)
- Input Capacitance (Ciss) (Max) @ Vds
- 950pF @ 1000V
- FET Feature
- -
- Current - Continuous Drain (Id) @ 25°C
- 36A (Tc)
- Part Status
- Active
- Drive Voltage (Max Rds On, Min Rds On)
- 20V
- Mounting Type
- Through Hole
- Package / Case
- TO-247-3