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Toshiba Semiconductor and Storage TPN6R003NL,LQ

MOSFET N CH 30V 27A 8TSON-ADV

Manufacturer
Toshiba Semiconductor and Storage
Datasheet
Price
0
Stock
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Product Details

Technology
MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C
4A (Ta)
FET Feature
-
Drive Voltage (Max Rds On, Min Rds On)
4.5V, 10V
Part Status
Active
Mounting Type
Surface Mount
Package / Case
TO-243AA
Vgs(th) (Max) @ Id
-
Operating Temperature
150°C (TJ)
Rds On (Max) @ Id, Vgs
65mOhm @ 2A, 10V
Series
-
Power Dissipation (Max)
2W (Ta)
FET Type
N-Channel
Supplier Device Package
SOT-89
Packaging
Tape & Reel (TR)
Drain to Source Voltage (Vdss)
30V
Vgs (Max)
±20V
Input Capacitance (Ciss) (Max) @ Vds
270pF @ 10V