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Toshiba Semiconductor and Storage TPN5900CNH,L1Q
MOSFET N-CH 150V 9A 8TSON
- Manufacturer
- Toshiba Semiconductor and Storage
- Datasheet
- Price
- 0
- Stock
- 3762
Product Details
- FET Type
- P-Channel
- Supplier Device Package
- PowerPAK® SO-8
- Packaging
- Cut Tape (CT)
- Gate Charge (Qg) (Max) @ Vgs
- 40nC @ 10V
- Vgs (Max)
- ±20V
- Drain to Source Voltage (Vdss)
- 60V
- Technology
- MOSFET (Metal Oxide)
- Input Capacitance (Ciss) (Max) @ Vds
- 1140pF @ 30V
- FET Feature
- -
- Current - Continuous Drain (Id) @ 25°C
- 8A (Tc)
- Part Status
- Active
- Drive Voltage (Max Rds On, Min Rds On)
- 4.5V, 10V
- Mounting Type
- Surface Mount
- Package / Case
- PowerPAK® SO-8
- Vgs(th) (Max) @ Id
- 2.5V @ 250µA
- Operating Temperature
- -55°C ~ 175°C (TA)
- Rds On (Max) @ Id, Vgs
- 85mOhm @ 3.5A, 10V, 1.17mOhm @ 20A, 10V
- Series
- Automotive, AEC-Q101, TrenchFET®
- Power Dissipation (Max)
- 45W (Tc)