Toshiba Semiconductor and Storage TPN4R712MD,L1Q

Product Details

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

160pF @ 10V

Technology

MOSFET (Metal Oxide)

Current - Continuous Drain (Id) @ 25°C

2A (Ta)

FET Feature

-

Drive Voltage (Max Rds On, Min Rds On)

2.5V, 4V

Part Status

Not For New Designs

Mounting Type

Surface Mount

Package / Case

TO-243AA

Vgs(th) (Max) @ Id

1.5V @ 1mA

Operating Temperature

150°C (TJ)

Rds On (Max) @ Id, Vgs

320mOhm @ 1A, 4V

Series

-

Power Dissipation (Max)

500mW (Ta)

FET Type

N-Channel

Supplier Device Package

MPT3

Packaging

Digi-Reel®

Drain to Source Voltage (Vdss)

60V