Toshiba Semiconductor and Storage TPN4R303NL,L1Q

Product Details

FET Feature

-

Current - Continuous Drain (Id) @ 25°C

21A (Ta)

Part Status

Active

Drive Voltage (Max Rds On, Min Rds On)

4.5V, 10V

Mounting Type

Surface Mount

Package / Case

8-SOIC (0.154", 3.90mm Width)

Vgs(th) (Max) @ Id

2.35V @ 50µA

Operating Temperature

-55°C ~ 150°C (TJ)

Rds On (Max) @ Id, Vgs

3.5mOhm @ 21A, 10V

Series

HEXFET®

Power Dissipation (Max)

2.5W (Ta)

FET Type

N-Channel

Supplier Device Package

8-SO

Packaging

Digi-Reel®

Gate Charge (Qg) (Max) @ Vgs

30nC @ 4.5V

Vgs (Max)

±20V

Drain to Source Voltage (Vdss)

30V

Technology

MOSFET (Metal Oxide)

Input Capacitance (Ciss) (Max) @ Vds

3175pF @ 15V