Toshiba Semiconductor and Storage TPN4R203NC,L1Q

Product Details

Mounting Type

Surface Mount

Package / Case

TO-252-3, DPak (2 Leads + Tab), SC-63

Vgs(th) (Max) @ Id

2.2V @ 35µA

Operating Temperature

-55°C ~ 175°C (TJ)

Rds On (Max) @ Id, Vgs

7.8mOhm @ 50A, 10V

Series

Automotive, AEC-Q101, OptiMOS™

Power Dissipation (Max)

71W (Tc)

FET Type

N-Channel

Supplier Device Package

PG-TO252-3-11

Packaging

Tape & Reel (TR)

Gate Charge (Qg) (Max) @ Vgs

64nC @ 10V

Vgs (Max)

±16V

Drain to Source Voltage (Vdss)

60V

Technology

MOSFET (Metal Oxide)

Input Capacitance (Ciss) (Max) @ Vds

4780pF @ 25V

FET Feature

-

Current - Continuous Drain (Id) @ 25°C

50A (Tc)

Part Status

Active

Drive Voltage (Max Rds On, Min Rds On)

4.5V, 10V