Images are for reference only. See Product Specifications for product details
Toshiba Semiconductor and Storage TPN1600ANH,L1Q
MOSFET N CH 100V 17A 8TSON-ADV
- Manufacturer
- Toshiba Semiconductor and Storage
- Datasheet
- Price
- 0
- Stock
- 5220
Product Details
- FET Type
- P-Channel
- Supplier Device Package
- 6-WDFN (2x2)
- Packaging
- Digi-Reel®
- Gate Charge (Qg) (Max) @ Vgs
- 6.2nC @ 4.5V
- Vgs (Max)
- ±8V
- Drain to Source Voltage (Vdss)
- 20V
- Technology
- MOSFET (Metal Oxide)
- Input Capacitance (Ciss) (Max) @ Vds
- 531pF @ 10V
- FET Feature
- Schottky Diode (Isolated)
- Current - Continuous Drain (Id) @ 25°C
- 2.3A (Ta)
- Part Status
- Active
- Drive Voltage (Max Rds On, Min Rds On)
- 1.8V, 4.5V
- Mounting Type
- Surface Mount
- Package / Case
- 6-WDFN Exposed Pad
- Vgs(th) (Max) @ Id
- 1V @ 250µA
- Operating Temperature
- -55°C ~ 150°C (TJ)
- Rds On (Max) @ Id, Vgs
- 100mOhm @ 2A, 4.5V
- Series
- µCool™
- Power Dissipation (Max)
- 710mW (Ta)