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Toshiba Semiconductor and Storage TPN1110ENH,L1Q
MOSFET N-CH 200V 7.2A 8TSON
- Manufacturer
- Toshiba Semiconductor and Storage
- Datasheet
- Price
- 0
- Stock
- 0
Product Details
- Series
- TrenchFET®
- Power Dissipation (Max)
- 1.3W (Ta)
- FET Type
- P-Channel
- Supplier Device Package
- PowerPAK® 1212-8
- Packaging
- Tape & Reel (TR)
- Gate Charge (Qg) (Max) @ Vgs
- 18nC @ 4.5V
- Vgs (Max)
- ±12V
- Drain to Source Voltage (Vdss)
- 20V
- Technology
- MOSFET (Metal Oxide)
- Current - Continuous Drain (Id) @ 25°C
- 4.3A (Ta)
- FET Feature
- Schottky Diode (Isolated)
- Drive Voltage (Max Rds On, Min Rds On)
- 1.8V, 4.5V
- Part Status
- Active
- Mounting Type
- Surface Mount
- Package / Case
- PowerPAK® 1212-8
- Vgs(th) (Max) @ Id
- 1V @ 800µA
- Operating Temperature
- -55°C ~ 150°C (TJ)
- Rds On (Max) @ Id, Vgs
- 48mOhm @ 6.3A, 4.5V