Toshiba Semiconductor and Storage TPN11003NL,LQ

Product Details

Rds On (Max) @ Id, Vgs

220mOhm @ 2A, 10V

Series

OptiMOS™

Power Dissipation (Max)

2W (Ta)

FET Type

N-Channel

Supplier Device Package

PG-TSOP-6-6

Packaging

Tape & Reel (TR)

Gate Charge (Qg) (Max) @ Vgs

14.3nC @ 10V

Vgs (Max)

±20V

Drain to Source Voltage (Vdss)

100V

Technology

MOSFET (Metal Oxide)

Input Capacitance (Ciss) (Max) @ Vds

329pF @ 25V

FET Feature

-

Current - Continuous Drain (Id) @ 25°C

2A (Ta)

Part Status

Last Time Buy

Drive Voltage (Max Rds On, Min Rds On)

4.5V, 10V

Mounting Type

Surface Mount

Package / Case

SOT-23-6 Thin, TSOT-23-6

Vgs(th) (Max) @ Id

1.8V @ 218µA

Operating Temperature

-55°C ~ 150°C (TJ)