Toshiba Semiconductor and Storage TPHR6503PL,L1Q

Product Details

FET Type

N-Channel

Supplier Device Package

DIRECTFET™ MN

Packaging

Digi-Reel®

Gate Charge (Qg) (Max) @ Vgs

50nC @ 10V

Vgs (Max)

±20V

Drain to Source Voltage (Vdss)

60V

Technology

MOSFET (Metal Oxide)

Input Capacitance (Ciss) (Max) @ Vds

2120pF @ 25V

FET Feature

-

Current - Continuous Drain (Id) @ 25°C

86A (Tc)

Part Status

Active

Drive Voltage (Max Rds On, Min Rds On)

10V

Mounting Type

Surface Mount

Package / Case

DirectFET™ Isometric MN

Vgs(th) (Max) @ Id

4.9V @ 150µA

Operating Temperature

-40°C ~ 150°C (TJ)

Rds On (Max) @ Id, Vgs

7mOhm @ 17A, 10V

Series

HEXFET®

Power Dissipation (Max)

2.8W (Ta), 89W (Tc)