Toshiba Semiconductor and Storage TPH8R80ANH,L1Q

Product Details

Technology

MOSFET (Metal Oxide)

Input Capacitance (Ciss) (Max) @ Vds

950pF @ 15V

FET Feature

-

Current - Continuous Drain (Id) @ 25°C

5.9A (Ta)

Part Status

Active

Drive Voltage (Max Rds On, Min Rds On)

4.5V, 10V

Mounting Type

Surface Mount

Package / Case

TO-261-4, TO-261AA

Vgs(th) (Max) @ Id

2.7V @ 250µA

Operating Temperature

-65°C ~ 150°C (TJ)

Rds On (Max) @ Id, Vgs

50mOhm @ 5.9A, 10V

Series

-

Power Dissipation (Max)

3W (Ta)

FET Type

P-Channel

Supplier Device Package

SOT-223-4

Packaging

Digi-Reel®

Gate Charge (Qg) (Max) @ Vgs

40nC @ 10V

Vgs (Max)

±20V

Drain to Source Voltage (Vdss)

30V