Toshiba Semiconductor and Storage TPH7R506NH,L1Q

Product Details

Vgs (Max)

±20V

Drain to Source Voltage (Vdss)

30V

Technology

MOSFET (Metal Oxide)

Input Capacitance (Ciss) (Max) @ Vds

3640pF @ 15V

FET Feature

-

Current - Continuous Drain (Id) @ 25°C

24A (Ta), 123A (Tc)

Part Status

Active

Drive Voltage (Max Rds On, Min Rds On)

4.5V, 10V

Mounting Type

Surface Mount

Package / Case

8-PowerTDFN

Vgs(th) (Max) @ Id

1.7V @ 250µA

Operating Temperature

-55°C ~ 150°C (TJ)

Rds On (Max) @ Id, Vgs

3.4mOhm @ 16A, 10V

Series

NexFET™

Power Dissipation (Max)

3.1W (Ta), 83W (Tc)

FET Type

N-Channel

Supplier Device Package

8-VSONP (5x6)

Packaging

Digi-Reel®

Gate Charge (Qg) (Max) @ Vgs

54nC @ 10V