Toshiba Semiconductor and Storage TPH6R30ANL,L1Q

Product Details

Package / Case

8-PowerVDFN

Vgs(th) (Max) @ Id

3V @ 250µA

Operating Temperature

-55°C ~ 150°C (TJ)

Rds On (Max) @ Id, Vgs

22mOhm @ 7.2A, 10V

Series

-

Power Dissipation (Max)

2W (Ta)

FET Type

N-Channel

Supplier Device Package

PowerDI3333-8

Packaging

Tape & Reel (TR)

Gate Charge (Qg) (Max) @ Vgs

56.5nC @ 10V

Vgs (Max)

±20V

Drain to Source Voltage (Vdss)

75V

Technology

MOSFET (Metal Oxide)

Input Capacitance (Ciss) (Max) @ Vds

2737pF @ 35V

FET Feature

-

Current - Continuous Drain (Id) @ 25°C

23A (Tc)

Part Status

Active

Drive Voltage (Max Rds On, Min Rds On)

4.5V, 10V

Mounting Type

Surface Mount