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Toshiba Semiconductor and Storage TPH5900CNH,L1Q
MOSFET N-CH 150V 9A 8SOP
- Manufacturer
- Toshiba Semiconductor and Storage
- Datasheet
- Price
- 0
- Stock
- 12571
Product Details
- Series
- STripFET™
- Rds On (Max) @ Id, Vgs
- 55mOhm @ 2.5A, 10V
- FET Type
- N-Channel
- Power Dissipation (Max)
- 2.5W (Tc)
- Packaging
- Digi-Reel®
- Supplier Device Package
- 8-SO
- Vgs (Max)
- ±20V
- Gate Charge (Qg) (Max) @ Vgs
- 17nC @ 5V
- Technology
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)
- 60V
- FET Feature
- -
- Input Capacitance (Ciss) (Max) @ Vds
- 1250pF @ 25V
- Part Status
- Active
- Current - Continuous Drain (Id) @ 25°C
- 5A (Tc)
- Mounting Type
- Surface Mount
- Drive Voltage (Max Rds On, Min Rds On)
- 4.5V, 10V
- Package / Case
- 8-SOIC (0.154", 3.90mm Width)
- Base Part Number
- STS5N
- Vgs(th) (Max) @ Id
- 2.5V @ 250µA
- Operating Temperature
- 150°C (TJ)