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Toshiba Semiconductor and Storage TPH5200FNH,L1Q
MOSFET N-CH 250V 26A SOP8
- Manufacturer
- Toshiba Semiconductor and Storage
- Datasheet
- Price
- 0
- Stock
- 4160
Product Details
- FET Feature
- -
- Current - Continuous Drain (Id) @ 25°C
- 28A (Tc)
- Part Status
- Active
- Drive Voltage (Max Rds On, Min Rds On)
- 4.5V, 10V
- Mounting Type
- Surface Mount
- Package / Case
- PowerPAK® SO-8
- Vgs(th) (Max) @ Id
- 3V @ 250µA
- Operating Temperature
- -55°C ~ 150°C (TJ)
- Rds On (Max) @ Id, Vgs
- 41mOhm @ 7.8A, 10V
- Series
- TrenchFET®
- Power Dissipation (Max)
- 5.2W (Ta), 83W (Tc)
- FET Type
- P-Channel
- Supplier Device Package
- PowerPAK® SO-8
- Packaging
- Digi-Reel®
- Gate Charge (Qg) (Max) @ Vgs
- 160nC @ 10V
- Vgs (Max)
- ±20V
- Drain to Source Voltage (Vdss)
- 100V
- Technology
- MOSFET (Metal Oxide)
- Input Capacitance (Ciss) (Max) @ Vds
- 4600pF @ 50V