Toshiba Semiconductor and Storage TPH4R10ANL,L1Q

Product Details

Rds On (Max) @ Id, Vgs

4.3Ohm @ 1A, 10V

Series

π-MOSVII

Power Dissipation (Max)

60W (Tc)

FET Type

N-Channel

Supplier Device Package

PW-MOLD2

Packaging

Bulk

Gate Charge (Qg) (Max) @ Vgs

7nC @ 10V

Vgs (Max)

±30V

Drain to Source Voltage (Vdss)

600V

Technology

MOSFET (Metal Oxide)

Input Capacitance (Ciss) (Max) @ Vds

280pF @ 25V

FET Feature

-

Current - Continuous Drain (Id) @ 25°C

2A (Ta)

Part Status

Active

Drive Voltage (Max Rds On, Min Rds On)

10V

Mounting Type

Through Hole

Package / Case

TO-251-3 Stub Leads, IPak

Vgs(th) (Max) @ Id

4.4V @ 1mA

Operating Temperature

150°C (TJ)