Toshiba Semiconductor and Storage TPH4R003NL,L1Q

Product Details

Package / Case

SC-100, SOT-669

Vgs(th) (Max) @ Id

2.2V @ 1mA

Operating Temperature

-55°C ~ 175°C (TJ)

Rds On (Max) @ Id, Vgs

2.09mOhm @ 25A, 10V

Series

-

Power Dissipation (Max)

115W (Tc)

FET Type

N-Channel

Supplier Device Package

LFPAK56, Power-SO8

Packaging

Digi-Reel®

Gate Charge (Qg) (Max) @ Vgs

34.1nC @ 10V

Vgs (Max)

±20V

Drain to Source Voltage (Vdss)

25V

Technology

MOSFET (Metal Oxide)

Input Capacitance (Ciss) (Max) @ Vds

2485pF @ 12V

FET Feature

Schottky Diode (Body)

Current - Continuous Drain (Id) @ 25°C

100A (Tc)

Part Status

Active

Drive Voltage (Max Rds On, Min Rds On)

4.5V, 10V

Mounting Type

Surface Mount