Toshiba Semiconductor and Storage TPH2900ENH,L1Q

Product Details

Package / Case

8-PowerVDFN

Base Part Number

STL9

Vgs(th) (Max) @ Id

4V @ 250µA

Operating Temperature

150°C (TJ)

Series

MDmesh™ II Plus

Rds On (Max) @ Id, Vgs

860mOhm @ 2.4A, 10V

FET Type

N-Channel

Power Dissipation (Max)

48W (Tc)

Packaging

Digi-Reel®

Supplier Device Package

PowerFlat™ (5x6) HV

Vgs (Max)

±25V

Gate Charge (Qg) (Max) @ Vgs

10nC @ 10V

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

600V

FET Feature

-

Input Capacitance (Ciss) (Max) @ Vds

320pF @ 100V

Part Status

Active

Current - Continuous Drain (Id) @ 25°C

4.8A (Tc)

Mounting Type

Surface Mount

Drive Voltage (Max Rds On, Min Rds On)

10V