Toshiba Semiconductor and Storage TPH1R403NL,L1Q

Product Details

Packaging

Tube

Gate Charge (Qg) (Max) @ Vgs

17nC @ 10V

Vgs (Max)

±30V

Drain to Source Voltage (Vdss)

600V

Technology

MOSFET (Metal Oxide)

Input Capacitance (Ciss) (Max) @ Vds

730pF @ 25V

FET Feature

-

Current - Continuous Drain (Id) @ 25°C

6.5A (Tc)

Part Status

Active

Drive Voltage (Max Rds On, Min Rds On)

10V

Mounting Type

Through Hole

Package / Case

TO-220-3 Full Pack

Vgs(th) (Max) @ Id

5V @ 250µA

Operating Temperature

-55°C ~ 150°C (TJ)

Rds On (Max) @ Id, Vgs

1.25Ohm @ 3.25A, 10V

Series

UniFET-II™

Power Dissipation (Max)

33W (Tc)

FET Type

N-Channel

Supplier Device Package

TO-220F