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Toshiba Semiconductor and Storage TPH12008NH,L1Q
MOSFET N CH 80V 24A SOP
- Manufacturer
- Toshiba Semiconductor and Storage
- Datasheet
- Price
- 0
- Stock
- 0
Product Details
- Operating Temperature
- -55°C ~ 150°C (TJ)
- Rds On (Max) @ Id, Vgs
- 45Ohm @ 120mA, 10V
- Series
- SIPMOS®
- Power Dissipation (Max)
- 1.8W (Ta)
- FET Type
- N-Channel
- Supplier Device Package
- SOT-223
- Packaging
- Tape & Reel (TR)
- Gate Charge (Qg) (Max) @ Vgs
- 4.9nC @ 5V
- Vgs (Max)
- ±20V
- Drain to Source Voltage (Vdss)
- 600V
- Technology
- MOSFET (Metal Oxide)
- Input Capacitance (Ciss) (Max) @ Vds
- 146pF @ 25V
- FET Feature
- Depletion Mode
- Current - Continuous Drain (Id) @ 25°C
- 120mA (Ta)
- Part Status
- Active
- Drive Voltage (Max Rds On, Min Rds On)
- 0V, 10V
- Mounting Type
- Surface Mount
- Package / Case
- TO-261-4, TO-261AA
- Vgs(th) (Max) @ Id
- 1V @ 94µA