Toshiba Semiconductor and Storage TPH1110FNH,L1Q

Product Details

FET Feature

-

Input Capacitance (Ciss) (Max) @ Vds

226pF @ 100V

Part Status

Active

Current - Continuous Drain (Id) @ 25°C

4A (Tc)

Mounting Type

Surface Mount

Drive Voltage (Max Rds On, Min Rds On)

10V

Package / Case

TO-252-3, DPak (2 Leads + Tab), SC-63

Base Part Number

STD6N

Vgs(th) (Max) @ Id

4V @ 250µA

Operating Temperature

-55°C ~ 150°C (TJ)

Series

MDmesh™

Rds On (Max) @ Id, Vgs

1.35Ohm @ 2A, 10V

FET Type

N-Channel

Power Dissipation (Max)

60W (Tc)

Packaging

Digi-Reel®

Supplier Device Package

DPAK

Vgs (Max)

±25V

Gate Charge (Qg) (Max) @ Vgs

9.8nC @ 10V

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

650V