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Toshiba Semiconductor and Storage TPH1110ENH,L1Q
MOSFET N-CH 200V 7.2A 8SOP
- Manufacturer
- Toshiba Semiconductor and Storage
- Datasheet
- Price
- 0
- Stock
- 0
Product Details
- Mounting Type
- Through Hole
- Package / Case
- TO-220-3
- Vgs(th) (Max) @ Id
- 4V @ 250µA
- Operating Temperature
- -55°C ~ 175°C (TJ)
- Rds On (Max) @ Id, Vgs
- 60mOhm @ 12A, 10V
- Series
- QFET®
- Power Dissipation (Max)
- 75W (Tc)
- FET Type
- N-Channel
- Supplier Device Package
- TO-220-3
- Packaging
- Tube
- Gate Charge (Qg) (Max) @ Vgs
- 25nC @ 10V
- Vgs (Max)
- ±25V
- Drain to Source Voltage (Vdss)
- 80V
- Technology
- MOSFET (Metal Oxide)
- Input Capacitance (Ciss) (Max) @ Vds
- 750pF @ 25V
- FET Feature
- -
- Current - Continuous Drain (Id) @ 25°C
- 24A (Tc)
- Part Status
- Active
- Drive Voltage (Max Rds On, Min Rds On)
- 10V