Toshiba Semiconductor and Storage TPH11006NL,LQ

Product Details

Part Status

Active

Drive Voltage (Max Rds On, Min Rds On)

5V, 10V

Mounting Type

Surface Mount

Package / Case

TO-252-3, DPak (2 Leads + Tab), SC-63

Vgs(th) (Max) @ Id

2V @ 250µA

Operating Temperature

-55°C ~ 150°C (TJ)

Rds On (Max) @ Id, Vgs

750mOhm @ 2.75A, 10V

Series

QFET®

Power Dissipation (Max)

2.5W (Ta), 45W (Tc)

FET Type

N-Channel

Supplier Device Package

D-Pak

Packaging

Digi-Reel®

Gate Charge (Qg) (Max) @ Vgs

9nC @ 5V

Vgs (Max)

±20V

Drain to Source Voltage (Vdss)

200V

Technology

MOSFET (Metal Oxide)

Input Capacitance (Ciss) (Max) @ Vds

500pF @ 25V

FET Feature

-

Current - Continuous Drain (Id) @ 25°C

5.5A (Tc)