Toshiba Semiconductor and Storage TPCP8004(TE85L,F)

Product Details

Operating Temperature

150°C (TJ)

Rds On (Max) @ Id, Vgs

40mOhm @ 2.4A, 10V

Series

U-MOSIII-H

Power Dissipation (Max)

840mW (Ta)

FET Type

P-Channel

Supplier Device Package

PS-8 (2.9x2.4)

Packaging

Digi-Reel®

Gate Charge (Qg) (Max) @ Vgs

19nC @ 10V

Vgs (Max)

±20V

Drain to Source Voltage (Vdss)

40V

Technology

MOSFET (Metal Oxide)

Input Capacitance (Ciss) (Max) @ Vds

800pF @ 10V

FET Feature

-

Current - Continuous Drain (Id) @ 25°C

4.8A (Ta)

Part Status

Discontinued at Digi-Key

Drive Voltage (Max Rds On, Min Rds On)

4.5V, 10V

Mounting Type

Surface Mount

Package / Case

8-SMD, Flat Lead

Vgs(th) (Max) @ Id

2V @ 1mA