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Toshiba Semiconductor and Storage TPCP8001-H(TE85LFM

MOSFET N-CH 30V 7.2A PS-8

Manufacturer
Toshiba Semiconductor and Storage
Datasheet
Price
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Stock
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Product Details

Rds On (Max) @ Id, Vgs
1.35Ohm @ 500mA, 10V
Series
HiPerFET™, PolarP2™
Power Dissipation (Max)
543W (Tc)
FET Type
N-Channel
Supplier Device Package
PLUS220
Packaging
Tube
Gate Charge (Qg) (Max) @ Vgs
103nC @ 10V
Vgs (Max)
±30V
Drain to Source Voltage (Vdss)
1200V
Technology
MOSFET (Metal Oxide)
Input Capacitance (Ciss) (Max) @ Vds
5400pF @ 25V
FET Feature
-
Current - Continuous Drain (Id) @ 25°C
12A (Tc)
Part Status
Obsolete
Drive Voltage (Max Rds On, Min Rds On)
10V
Mounting Type
Through Hole
Package / Case
TO-220-3, Short Tab
Vgs(th) (Max) @ Id
6.5V @ 1mA
Operating Temperature
-55°C ~ 150°C (TJ)