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Toshiba Semiconductor and Storage TPCF8102(TE85L,F,M
MOSFET P-CH 20V 6A VS8 2-3U1A
- Manufacturer
- Toshiba Semiconductor and Storage
- Datasheet
- Price
- 0
- Stock
- 0
Product Details
- Technology
- MOSFET (Metal Oxide)
- Input Capacitance (Ciss) (Max) @ Vds
- 640pF @ 10V
- FET Feature
- -
- Current - Continuous Drain (Id) @ 25°C
- 7.2A (Ta)
- Part Status
- Obsolete
- Drive Voltage (Max Rds On, Min Rds On)
- 4.5V, 10V
- Mounting Type
- Surface Mount
- Package / Case
- 8-SMD, Flat Lead
- Vgs(th) (Max) @ Id
- 2.3V @ 1mA
- Operating Temperature
- 150°C (TJ)
- Rds On (Max) @ Id, Vgs
- 16mOhm @ 3.6A, 10V
- Series
- U-MOSIII
- Power Dissipation (Max)
- 1W (Ta), 30W (Tc)
- FET Type
- N-Channel
- Supplier Device Package
- PS-8 (2.9x2.4)
- Packaging
- Tape & Reel (TR)
- Gate Charge (Qg) (Max) @ Vgs
- 11nC @ 10V
- Vgs (Max)
- ±20V
- Drain to Source Voltage (Vdss)
- 30V