Toshiba Semiconductor and Storage TPCC8103(TE12L,QM)

Product Details

FET Feature

-

Input Capacitance (Ciss) (Max) @ Vds

475pF @ 25V

Part Status

Active

Current - Continuous Drain (Id) @ 25°C

10A (Tc)

Mounting Type

Surface Mount

Drive Voltage (Max Rds On, Min Rds On)

4.5V, 10V

Package / Case

8-SOIC (0.154", 3.90mm Width)

Base Part Number

STS10

Vgs(th) (Max) @ Id

1V @ 250µA

Operating Temperature

-55°C ~ 150°C (TJ)

Series

STripFET™ V

Rds On (Max) @ Id, Vgs

21mOhm @ 5A, 10V

FET Type

N-Channel

Power Dissipation (Max)

2.5W (Tc)

Packaging

Digi-Reel®

Supplier Device Package

8-SO

Vgs (Max)

±22V

Gate Charge (Qg) (Max) @ Vgs

4.6nC @ 5V

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

30V