Toshiba Semiconductor and Storage TPCA8128,LQ(CM

Product Details

Rds On (Max) @ Id, Vgs

5.6mOhm @ 20A, 10V

Series

-

Power Dissipation (Max)

7.4W (Ta), 83W (Tc)

FET Type

N-Channel

Supplier Device Package

8-DFN (5x6)

Packaging

Tape & Reel (TR)

Gate Charge (Qg) (Max) @ Vgs

51nC @ 10V

Vgs (Max)

±20V

Drain to Source Voltage (Vdss)

80V

Technology

MOSFET (Metal Oxide)

Input Capacitance (Ciss) (Max) @ Vds

2848pF @ 40V

FET Feature

-

Current - Continuous Drain (Id) @ 25°C

26.5A (Ta), 85A (Tc)

Part Status

Active

Drive Voltage (Max Rds On, Min Rds On)

6V, 10V

Mounting Type

Surface Mount

Package / Case

8-PowerSMD, Flat Leads

Vgs(th) (Max) @ Id

3.5V @ 250µA

Operating Temperature

-55°C ~ 150°C (TJ)