Toshiba Semiconductor and Storage TPCA8062-H,LQ(CM

Product Details

Vgs (Max)

±20V

Drain to Source Voltage (Vdss)

600V

Technology

MOSFET (Metal Oxide)

Input Capacitance (Ciss) (Max) @ Vds

620pF @ 25V

FET Feature

-

Current - Continuous Drain (Id) @ 25°C

6.2A (Tc)

Part Status

Not For New Designs

Drive Voltage (Max Rds On, Min Rds On)

10V

Mounting Type

Surface Mount

Package / Case

TO-252-3, DPak (2 Leads + Tab), SC-63

Vgs(th) (Max) @ Id

3.9V @ 260µA

Operating Temperature

-55°C ~ 150°C (TJ)

Rds On (Max) @ Id, Vgs

750mOhm @ 3.9A, 10V

Series

CoolMOS™

Power Dissipation (Max)

74W (Tc)

FET Type

N-Channel

Supplier Device Package

PG-TO252-3-1

Packaging

Tape & Reel (TR)

Gate Charge (Qg) (Max) @ Vgs

31nC @ 10V