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Toshiba Semiconductor and Storage TPCA8011-H(TE12LQM

MOSFET N-CH 20V 40A SOP-8 ADV

Manufacturer
Toshiba Semiconductor and Storage
Datasheet
Price
0
Stock
0

Product Details

Vgs (Max)
±20V
Drain to Source Voltage (Vdss)
30V
Technology
MOSFET (Metal Oxide)
Input Capacitance (Ciss) (Max) @ Vds
3713pF @ 10V
FET Feature
-
Current - Continuous Drain (Id) @ 25°C
40A (Ta)
Part Status
Obsolete
Drive Voltage (Max Rds On, Min Rds On)
4.5V, 10V
Mounting Type
Surface Mount
Package / Case
8-PowerVDFN
Vgs(th) (Max) @ Id
2.5V @ 1mA
Operating Temperature
150°C (TJ)
Rds On (Max) @ Id, Vgs
4.9mOhm @ 20A, 10V
Series
-
Power Dissipation (Max)
-
FET Type
N-Channel
Supplier Device Package
8-SOP Advance (5x5)
Packaging
Tape & Reel (TR)
Gate Charge (Qg) (Max) @ Vgs
42nC @ 10V