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Toshiba Semiconductor and Storage TPCA8010-H(TE12LQM

MOSFET N-CH 200V 5.5A SOP-8 ADV

Manufacturer
Toshiba Semiconductor and Storage
Datasheet
Price
0
Stock
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Product Details

Package / Case
8-PowerVDFN
Vgs(th) (Max) @ Id
1.3V @ 200µA
Operating Temperature
150°C (TJ)
Rds On (Max) @ Id, Vgs
3.5mOhm @ 20A, 4.5V
Series
U-MOSIII-H
Power Dissipation (Max)
1.6W (Ta), 45W (Tc)
FET Type
N-Channel
Supplier Device Package
8-SOP Advance (5x5)
Packaging
Tape & Reel (TR)
Gate Charge (Qg) (Max) @ Vgs
32nC @ 5V
Vgs (Max)
±12V
Drain to Source Voltage (Vdss)
20V
Technology
MOSFET (Metal Oxide)
Input Capacitance (Ciss) (Max) @ Vds
2900pF @ 10V
FET Feature
-
Current - Continuous Drain (Id) @ 25°C
40A (Ta)
Part Status
Obsolete
Drive Voltage (Max Rds On, Min Rds On)
2.5V, 4.5V
Mounting Type
Surface Mount