Images are for reference only. See Product Specifications for product details

Toshiba Semiconductor and Storage TPCA8008-H(TE12L,Q

MOSFET N-CH 250V 4A 8-SOPA

Manufacturer
Toshiba Semiconductor and Storage
Datasheet
Price
0
Stock
0

Product Details

FET Type
N-Channel
Supplier Device Package
TO-220AB
Packaging
Tube
Gate Charge (Qg) (Max) @ Vgs
23nC @ 10V
Vgs (Max)
±20V
Drain to Source Voltage (Vdss)
100V
Technology
MOSFET (Metal Oxide)
Input Capacitance (Ciss) (Max) @ Vds
550pF @ 50V
FET Feature
-
Current - Continuous Drain (Id) @ 25°C
18A (Tc)
Part Status
Obsolete
Drive Voltage (Max Rds On, Min Rds On)
10V
Mounting Type
Through Hole
Package / Case
TO-220-3
Vgs(th) (Max) @ Id
5V @ 250µA
Operating Temperature
-55°C ~ 175°C (TJ)
Rds On (Max) @ Id, Vgs
72.5mOhm @ 13A, 10V
Series
-
Power Dissipation (Max)
60W (Tc)