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Toshiba Semiconductor and Storage TPC8A06-H(TE12LQM)
MOSFET N-CH 30V 12A 8SOP
- Manufacturer
- Toshiba Semiconductor and Storage
- Datasheet
- Price
- 0
- Stock
- 0
Product Details
- Power Dissipation (Max)
- -
- Series
- U-MOSIV
- Supplier Device Package
- 8-TSON Advance (3.3x3.3)
- FET Type
- N-Channel
- Gate Charge (Qg) (Max) @ Vgs
- 26nC @ 10V
- Packaging
- Tape & Reel (TR)
- Drain to Source Voltage (Vdss)
- 30V
- Technology
- MOSFET (Metal Oxide)
- Input Capacitance (Ciss) (Max) @ Vds
- 1270pF @ 10V
- FET Feature
- -
- Current - Continuous Drain (Id) @ 25°C
- 24A (Ta)
- Part Status
- Obsolete
- Mounting Type
- Surface Mount
- Package / Case
- 8-PowerVDFN
- Vgs(th) (Max) @ Id
- 3V @ 200µA
- Operating Temperature
- 150°C (TJ)
- Rds On (Max) @ Id, Vgs
- 7mOhm @ 12A, 10V