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Toshiba Semiconductor and Storage TPC8A05-H(TE12L,QM

MOSFET N-CH 30V 10A 8SOP

Manufacturer
Toshiba Semiconductor and Storage
Datasheet
Price
0
Stock
0

Product Details

Part Status
Obsolete
Drive Voltage (Max Rds On, Min Rds On)
4.5V, 10V
Mounting Type
Surface Mount
Package / Case
8-SOIC (0.173", 4.40mm Width)
Vgs(th) (Max) @ Id
2.3V @ 1mA
Operating Temperature
-
Rds On (Max) @ Id, Vgs
10.1mOhm @ 6A, 10V
Series
-
Power Dissipation (Max)
-
FET Type
N-Channel
Supplier Device Package
8-SOP (5.5x6.0)
Packaging
Tape & Reel (TR)
Gate Charge (Qg) (Max) @ Vgs
19nC @ 10V
Vgs (Max)
±20V
Drain to Source Voltage (Vdss)
30V
Technology
MOSFET (Metal Oxide)
Input Capacitance (Ciss) (Max) @ Vds
1800pF @ 10V
FET Feature
Schottky Diode (Body)
Current - Continuous Drain (Id) @ 25°C
12A (Ta)