Toshiba Semiconductor and Storage TPC8134,LQ(S

Product Details

Package / Case

6-UDFN Exposed Pad

Vgs(th) (Max) @ Id

900mV @ 250µA

Operating Temperature

-55°C ~ 150°C (TJ)

Rds On (Max) @ Id, Vgs

19mOhm @ 8.2A, 4.5V

Power Dissipation (Max)

1.7W (Ta), 12.5W (Tc)

Series

-

Supplier Device Package

DFN2020MD-6

FET Type

P-Channel

Gate Charge (Qg) (Max) @ Vgs

100nC @ 4.5V

Packaging

Digi-Reel®

Drain to Source Voltage (Vdss)

12V

Technology

MOSFET (Metal Oxide)

Input Capacitance (Ciss) (Max) @ Vds

2875pF @ 6V

FET Feature

-

Current - Continuous Drain (Id) @ 25°C

8.2A (Ta)

Part Status

Discontinued at Digi-Key

Mounting Type

Surface Mount