Toshiba Semiconductor and Storage TPC8129,LQ(S

Product Details

Packaging

Tape & Reel (TR)

Gate Charge (Qg) (Max) @ Vgs

28nC @ 10V

Vgs (Max)

±20V

Drain to Source Voltage (Vdss)

30V

Technology

MOSFET (Metal Oxide)

Input Capacitance (Ciss) (Max) @ Vds

1979pF @ 15V

FET Feature

-

Current - Continuous Drain (Id) @ 25°C

8.9A (Ta), 52A (Tc)

Part Status

Active

Drive Voltage (Max Rds On, Min Rds On)

4.5V, 10V

Mounting Type

Surface Mount

Package / Case

8-PowerWDFN

Vgs(th) (Max) @ Id

2.2V @ 250µA

Operating Temperature

-55°C ~ 150°C (TJ)

Rds On (Max) @ Id, Vgs

5.5mOhm @ 20A, 10V

Series

-

Power Dissipation (Max)

850mW (Ta), 29.8W (Tc)

FET Type

N-Channel

Supplier Device Package

8-WDFN (3.3x3.3)