Toshiba Semiconductor and Storage TPC8126,LQ(CM

Product Details

Rds On (Max) @ Id, Vgs

13.3mOhm @ 5A, 10V

Series

U-MOSV-H

Power Dissipation (Max)

1W (Ta)

FET Type

N-Channel

Supplier Device Package

8-SOP (5.5x6.0)

Packaging

Tape & Reel (TR)

Gate Charge (Qg) (Max) @ Vgs

15nC @ 10V

Vgs (Max)

±20V

Drain to Source Voltage (Vdss)

30V

Technology

MOSFET (Metal Oxide)

Input Capacitance (Ciss) (Max) @ Vds

1700pF @ 10V

FET Feature

Schottky Diode (Body)

Current - Continuous Drain (Id) @ 25°C

10A (Ta)

Part Status

Obsolete

Drive Voltage (Max Rds On, Min Rds On)

4.5V, 10V

Mounting Type

Surface Mount

Package / Case

8-SOIC (0.173", 4.40mm Width)

Vgs(th) (Max) @ Id

2.3V @ 1mA

Operating Temperature

150°C (TJ)