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Toshiba Semiconductor and Storage TPC8125,LQ(S
MOSFET P-CH 30V 10A 8SOP
- Manufacturer
- Toshiba Semiconductor and Storage
- Datasheet
- Price
- 0
- Stock
- 0
Product Details
- Packaging
- Tape & Reel (TR)
- Gate Charge (Qg) (Max) @ Vgs
- 14nC @ 10V
- Vgs (Max)
- ±20V
- Drain to Source Voltage (Vdss)
- 30V
- Technology
- MOSFET (Metal Oxide)
- Input Capacitance (Ciss) (Max) @ Vds
- 640pF @ 10V
- FET Feature
- -
- Current - Continuous Drain (Id) @ 25°C
- 6A (Ta)
- Part Status
- Active
- Drive Voltage (Max Rds On, Min Rds On)
- 4.5V, 10V
- Mounting Type
- Surface Mount
- Package / Case
- SOT-23-6 Thin, TSOT-23-6
- Vgs(th) (Max) @ Id
- 2.5V @ 1mA
- Operating Temperature
- 150°C (TJ)
- Rds On (Max) @ Id, Vgs
- 20mOhm @ 3A, 10V
- Series
- U-MOSIV
- Power Dissipation (Max)
- 700mW (Ta)
- FET Type
- N-Channel
- Supplier Device Package
- VS-6 (2.9x2.8)